Genis, Alan P.
M.S. (Master of Science)
Department of Electrical Engineering
Vapor-plating||Silicon polymers||Dielectric films||Silicon nitride
Chemical Vapor Deposition (CVD) techniques to grow polysilicon, silicon nitride, silicon dioxide, and other types of dielectric films are used extensively in the semiconductor microelectronics industry. Low pressure CVD (LPCVD) techniques allow closely packed vertical positioning of the substrate wafers, yielding greatly increased throughput in film deposition for a variety of materials without loss of uniformity. The goal of this project was to design and implement a LPCVD system with the equipment available in the Microelectronics Laboratory in the Department of Electrical Engineering at Northern Illinois University. It has been demonstrated that the system is able to grow polysilicon (Si[subpoly]) and silicon nitride (Si₃N₄) such that it can be utilized with the other facilities in the laboratory to produce self-aligned Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Field Effect Transistor (CMOS) processes. This thesis reviews fundamental theories controlling the CVD processes including: reaction chemistry, thermodynamics considerations, mass-transport phenomena, and growth kinetics, along with a discussion of the principles of LPCVD safety issues related to this project, and a description of the design and implementation of the system. Finally, the experimental analysis and recommendations for future work are provided.
Zhu, Jianwen, "Design and implementation of a low pressure chemical vapor deposition system for polysilicon and silicon nitride" (1992). Graduate Research Theses & Dissertations. 2087.
x, 86 pages
Northern Illinois University
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