Publication Date
1992
Document Type
Dissertation/Thesis
First Advisor
Genis, Alan P.
Degree Name
M.S. (Master of Science)
Legacy Department
Department of Electrical Engineering
LCSH
Vapor-plating; Silicon polymers; Dielectric films; Silicon nitride
Abstract
Chemical Vapor Deposition (CVD) techniques to grow polysilicon, silicon nitride, silicon dioxide, and other types of dielectric films are used extensively in the semiconductor microelectronics industry. Low pressure CVD (LPCVD) techniques allow closely packed vertical positioning of the substrate wafers, yielding greatly increased throughput in film deposition for a variety of materials without loss of uniformity. The goal of this project was to design and implement a LPCVD system with the equipment available in the Microelectronics Laboratory in the Department of Electrical Engineering at Northern Illinois University. It has been demonstrated that the system is able to grow polysilicon (Si[subpoly]) and silicon nitride (Si₃N₄) such that it can be utilized with the other facilities in the laboratory to produce self-aligned Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Field Effect Transistor (CMOS) processes. This thesis reviews fundamental theories controlling the CVD processes including: reaction chemistry, thermodynamics considerations, mass-transport phenomena, and growth kinetics, along with a discussion of the principles of LPCVD safety issues related to this project, and a description of the design and implementation of the system. Finally, the experimental analysis and recommendations for future work are provided.
Recommended Citation
Zhu, Jianwen, "Design and implementation of a low pressure chemical vapor deposition system for polysilicon and silicon nitride" (1992). Graduate Research Theses & Dissertations. 2087.
https://huskiecommons.lib.niu.edu/allgraduate-thesesdissertations/2087
Extent
x, 86 pages
Language
eng
Publisher
Northern Illinois University
Rights Statement
In Copyright
Rights Statement 2
NIU theses are protected by copyright. They may be viewed from Huskie Commons for any purpose, but reproduction or distribution in any format is prohibited without the written permission of the authors.
Media Type
Text
Comments
Includes bibliographical references (pages [67]-69)