Publication Date

2015

Document Type

Dissertation/Thesis

First Advisor

Zinger, Donald S.

Degree Name

M.S. (Master of Science)

Legacy Department

Department of Electrical Engineering

LCSH

SPICE (Computer file); Engineering; Electrical engineering; Metal oxide semiconductor field-effect transistors--Research; Electronic circuit design--Research; Integrated circuits--Design and construction--Research

Abstract

This paper proposes a simple extraction technique which can be used to extract device parameters of any power MOSFET easily. It only requires the use of transfer and output characteristic graphs to extract threshold voltage and transconductance and a few formulas to extract the parasitic capacitances of the power device. The extraction technique is presented in an easy to understand step by step procedure. The parameters extracted using this process are used to develop a spice model. Transient analysis is done for the extracted model and the resistive switching performance is compared with the datasheet in order to prove the effectiveness of the extraction technique used. Inductive switching is also done for the extracted model and the effect of varying the parameters of the MOSFET on inductive switching times is observed. Finally, this observation is then used to develop a new mathematical SiC power MOSFET model which has better inductive switching times than the extracted model and the thesis is concluded.

Comments

Advisors: Donald S. Zinger.||Committee members: Michael J. Haji-Sheikh; Venumadhav Korampally.

Extent

65 pages

Language

eng

Publisher

Northern Illinois University

Rights Statement

In Copyright

Rights Statement 2

NIU theses are protected by copyright. They may be viewed from Huskie Commons for any purpose, but reproduction or distribution in any format is prohibited without the written permission of the authors.

Media Type

Text

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