M.S. (Master of Science)
Department of Electrical Engineering
This research paper aims to grow and optically characterize the Zinc-Oxide (ZnO) nanowires grown using the hydrothermal synthesis method on different semiconductor wafers. We have developed the samples on p-type silicon, n-type silicon, and silicon di-oxide wafers at different temperatures, molarities, and times. Using hydrothermal synthesis method Zinc Oxide nanowires are grown. Zinc Nitrate Hexa-hydrate and Hexamethylenetetramine are chemical components used in the hydrothermal synthesis method at low temperatures.
Different types of analysis have been done on these samples with the help of “Argonne National Laboratory.” The optical absorption spectra were obtained using Perkin Elmer LAMBDA 950 UV-VIS-NIR Spectrophotometer. Photoluminescence is used to check the purity and crystalline quality of the Zinc oxide by the Perkin Elmer LS55 Luminescence spectrometer. Structural fingerprints of Zinc Oxide nanowires are identified by Renishaw inVia Reflex Raman Microscope using a UV laser. The dimensional values and structures are obtained from Scanned Electron Microscope (SEM) analysis using the Hitachi S-4700-II SEM. Bruker D2 Phaser XRD is done to analyze X-Ray diffraction of the structure of crystalline material.
Ananthula, Mythili, "Growth Optimization of Zinc-Oxide Nanowires/Nanorods Using Hydrothermal Synthesis on Silicon Wafers" (2020). Graduate Research Theses & Dissertations. 6814.
Northern Illinois University
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