Publication Date

1980

Document Type

Dissertation/Thesis

First Advisor

Wood, C.

Degree Name

M.S. (Master of Science)

Department

Department of Physics

LCSH

Transport theory||Hall effect

Abstract

Hall effect measurements have been made on single crystals of As₂Se₃ yielding electron mobilities of ~100 cm²/V-sec in the temperature range 300°K to 400°K. Comparison of results to published data on amorphous As₂Se₃ shows that the short range order of the amorphous state does not carry into the crystalline state as it has been previously stated for As₂Se₃. Measurement of the Hall effect in ion-beam sputtered ITO thin films has been made to investigate the conductivity dependence on the angle of the incident beam. Measurements of conductivity, carrier concentration, and mobility were made over the temperature range 300- 400°K for various angles of incidence. The results, although not conclusive, do suggest the possibility of the formation of islands of SnO₂ in the films, accounting for a carrier concentration dependence on the angle of incidence.

Comments

Includes bibliographical references.||Includes illustrations.

Extent

viii, 59 pages

Language

eng

Publisher

Northern Illinois University

Rights Statement

In Copyright

Rights Statement 2

NIU theses are protected by copyright. They may be viewed from Huskie Commons for any purpose, but reproduction or distribution in any format is prohibited without the written permission of the authors.

Media Type

Text

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