Publication Date

1992

Document Type

Dissertation/Thesis

First Advisor

Genis, Alan P.

Degree Name

M.S. (Master of Science)

Department

Department of Electrical Engineering

LCSH

Solid state electronics||Field-effect transistors

Abstract

During the summer of 1986, the first field effect transistors were built. These transistors were enhancement mode NMOS single layer aluminum gate FETs. Using this technology simple logic gates could be fabricated. But with the demand for greater complexity and density, multiple interconnect layers and smaller device geometries are needed. Given limited fabrication facilities, the only course of action available is to develop multilevel interconnect technology. But, three processes have to be developed before this can happen. First, the aluminum interconnects must be replaced with a metal silicide that can withstand post processing temperatures. Second, an interlayer dielectric system must be added to isolate the individual layers. Finally, a self aligned via system must be employed to decrease topography. It was the purpose of this study to develop a self aligned via process using the metal liftoff technique. This process will benefit the industry in general because the process does not need a selective etch step or a reactive ion etch step, nor does it use toxic chemicals.

Comments

Includes bibliographical references (pages [40]-41)

Extent

iv, 62 pages

Language

eng

Publisher

Northern Illinois University

Rights Statement

In Copyright

Rights Statement 2

NIU theses are protected by copyright. They may be viewed from Huskie Commons for any purpose, but reproduction or distribution in any format is prohibited without the written permission of the authors.

Media Type

Text

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