Publication Date

1990

Document Type

Dissertation/Thesis

First Advisor

Mackenzie, Ken D.

Degree Name

M.S. (Master of Science)

Department

Department of Physics

LCSH

Crystals--Defects||Silicon crystals

Abstract

Sub-band gap absorption is a good measure of the defect density in hydrogenated amorphous silicon (a-Si:H). The aim of this work is to design, construct and automate an apparatus to measure the sub-band gap absorption in a-Si:H by the constant photocurrent method (CPM). Successful operation of this system is demonstrated by the results of measurements performed on several samples.

Comments

Includes bibliographical references (pages 27-28)

Extent

vii, [31] pages

Language

eng

Publisher

Northern Illinois University

Rights Statement

In Copyright

Rights Statement 2

NIU theses are protected by copyright. They may be viewed from Huskie Commons for any purpose, but reproduction or distribution in any format is prohibited without the written permission of the authors.

Media Type

Text

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