Mackenzie, Ken D.
M.S. (Master of Science)
Department of Physics
Crystals--Defects; Silicon crystals
Sub-band gap absorption is a good measure of the defect density in hydrogenated amorphous silicon (a-Si:H). The aim of this work is to design, construct and automate an apparatus to measure the sub-band gap absorption in a-Si:H by the constant photocurrent method (CPM). Successful operation of this system is demonstrated by the results of measurements performed on several samples.
Madden, Maureen Patricia, "Sub-band gap absorption measurement on intrinsic hydrogenated amorphous silicon by the constant photocurrent method" (1990). Graduate Research Theses & Dissertations. 5126.
vii,  pages
Northern Illinois University
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