Genis, Alan P.
M.S. (Master of Science)
Department of Electrical Engineering
Metal oxide semiconductors; Complementary; Diffusion; Electric inverters
The emphasis of the design is to achieve threshold voltages of -0.27 volts and 1.87 volts for a p-channel Metal Oxide Semiconductor and a n-channel Metal Oxide Semiconductor respectively. The following paper describes a complete process in designing and fabricating a five micron Complementary Metal Oxide Semiconductor (CMOS) Inverter device within a Class 1000 wafer fabrication area, utilizing Mead and Conway's lambda-base rules and diffusion techniques. A Complementary Metal Oxide Semiconductor Inverter utilizes two separate transistors, a p-channel Metal Oxide Semiconductor and a n-channel Metal Oxide Semiconductor. The silicon substrate is an n-type, in which a p-well region is created by diffusion. The p-channel transistor is formed in the n-type silicon substrate, whereas the n-channel transistor is created in the p-well region, which performs as the backgate for the n-channel transistor. The experimental measurements on the p-channel MOSFET and n-channel MOSFET structures corresponding to the computations derived from the theoretical equations showed a disagreement. Threshold voltages of +2.5 and +2.0 volts for p- and n- MOSFET's were obtained, respectively.
Diaz, Jacqueline E., "Preparation of a complementary metal oxide semiconductor inverter using diffusion techniques" (1992). Graduate Research Theses & Dissertations. 4486.
vi, 92 pages
Northern Illinois University
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