Publication Date

1995

Document Type

Dissertation/Thesis

First Advisor

Shaffer, John C., 1938-2017

Degree Name

M.S. (Master of Science)

Department

Department of Physics

LCSH

Semiconductors--Computer simulation||Silicon||Zinc sulphide||Gallium compounds

Abstract

The effects of point defects on the electronic and optical properties of semiconductors is a very large field of research in solid state physics. The goal of the project was to study the effect of Frenkel defects in silicon(Si), zinc sulphide(ZnS) and gallium phosphide(GaP). The research was based on a theoretical model(computer model) of a lattice. The model was a program written in Fortran77.The program was written so that it could simulate a crystal lattice structure where the size of the lattice and density of defects could be changed and the perturbation due to the defects can be calculated. This main objective of this thesis is to study the effect of these defects on the energy band structure of extrinsic Si, ZnS and GaP assuming that all the donor levels were shallow donors. The basis for the thesis is laid by reviewing the theory of the effective mass approximation of shallow donor states, energy of formation of Frenkel defects and finally running the program for different parameters such as concentration of defects, size of lattice and type of material.

Comments

Includes bibliographical references (leaf [74])

Extent

ix, 83 pages

Language

eng

Publisher

Northern Illinois University

Rights Statement

In Copyright

Rights Statement 2

NIU theses are protected by copyright. They may be viewed from Huskie Commons for any purpose, but reproduction or distribution in any format is prohibited without the written permission of the authors.

Media Type

Text

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